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TOF-SIMS IV - 100 (ION-TOF GmbH)

  Main components:        
  • UHV analytical chamber
  • 5-axes (x, y, z, azimuthal rotation, tilt) motorized and computer controlled stage
  • fast entry load-lock introduction chamber
  • sample holder accomodating 2 cm diameter samples up to 6 mm thick
  • pulsed low-energy (20 eV) electron flood gun for charge compensation of insulating samples
  • liquid metal Ga ion source
  • dual-source ion column equipped with two ion sources (O/Ar and Cs)
  • 2m reflectron type (time of flight) mass analyzer
  • secondary electron detector for SE imaging
  
Features:  
 
  • dual beam profiling (Ar/O2/Cs for layer removal, Ga for analysis)
  • sputter rate of analysis beam < 0.1 nm/min
  • analyser mass range 1-9,000 with sensitivity < 1ppm
  • mass resolution of 8,000 at m=29 u and 12,000 at m=372 u
  • surface imaging with parallel mass detection
  • secondary electron imaging
  • maximum beam raster size 500 um x 500 um
  • macro (stage) raster upto 5 cm x 5 cm
  • 4D raw data file (x, y, z, m) for each secondary ion to allow reconstruction of spectra, profiles and images
  • data processing software incl. static SIMS library

  
Parameters of sputter ion sources:
   
Type Ions Energy range Maximum current Beam diameter
Electron impact Ar, O2 0.2-2 keV

100 nA @ 0.5 keV

250 nA @ 1 keV

600 nA @ 2 keV

 75 um
Thermal ionization Cs 0.2-2 keV

40 nA @ 0.5 keV

75 nA @ 1 keV

150 nA @ 1 keV

 75 um
   
 

 

Performance of the analytical gun (Cs+, 25 keV) at different modes:

   
Mode
Lateral resolution
Mass resolution
Primary ions/pulse (current)
SE 60 nm - (50 pA)
Bunched

< 10 um

8,000 (FWHM)

for m=29

> 2.5 pA
Collimated < 100 nm Unit mass <35
Burst < 300 nm > 5000 (FWHM > 6 (38 pA)
Burst alignement < 250 nm Unit mass (DC > 1 nA)
   
Special features of the UoA instrument:    
  • coupled with AXIS Ultra XPS spectrometer
  • coupled with TPD facility
  • glove box available for loading in controlled environment