Arguably, the transistor has made the biggest impact on human civilization since the development of agriculture. My interests are to further expand the limits of this development through enhanced use of new materials. At the very nano-scale, it involves designing and testing devices and materials to produce a compelling alternative to the best low power device architecture available -- silicon CMOS. At the very large, enhanced use of electronics stands to make great impacts in the power management systems of the future. Under both circumstances, while the size may be much different, the electric fields that are managed are nearly the same. Furthermore, power efficiency is critical to both applications and similar governing physical mechanisms require investigation. The simultaneous investigation of new materials and device architectures requires a rigorous, collaborative and very interdisciplinary approach.
Immediate opportunities exist for the deployment of devices using wide band-gap materials. Current projects include the demonstration of an optimized GaN based enhancement device with re-grown source drain and high-k gate dielectric suitable for high voltage applications >1200V. Other projects involve the defect tolerance in wide band-gap materials such as ZnO a compelling low-cost easily deposited and formed material with potentially large breakdown field and high saturation velocity. While my interests are in the electronics area, Both GaN and ZnO are currently being actively pursued for optical applications and are seen as a potential device material for electronics.