Manisha Gupta has received a PhD in Electrical Engineering from Yale University, a MS in Electrical Engineering from Rensselaer Polytechnic Institute and an undergraduate degree from Mumbai University in India in Instrumentation Engineering. During her PhD, she developed the first novel tunable gallium arsenide deep center laser based on electrical injection. She has worked on wafer level 3D integration of chips during her MS, along with yield studies on damascene structures. As a postdoctoral fellow and research associate, she has conducted research in the area of optical materials including different growth techniques like Molecular Beam Epitaxy and Pulsed Laser deposition for growth and optimization of different materials for device applications. She has also worked on several laser applications based on light scattering for label free detection of cells and also for oil sands applications. She has industrial experience at the Alberta Center for Micro Nano Technology Products, where she worked as an optoelectronics product engineer, and at H2Gen Innovations where she worked as an Instrumentation engineer, in addition to research experience at a National Laboratory in India. In essence, her strengths are in optical materials, photonics, devices and sensing.