Dr. Vaidyanathan’s research interests are in understanding nanoscale transistors and circuits for future technologies. State-of-the-art modeling and simulation approaches, such as the semi-classical Boltzmann transport equation (BTE) and the fully quantum-mechanical non-equilibrium Green’s function approach (NEGF), are used to assess the performance potential and operating physics of emerging transistors. Work is also underway in the area of radio-frequency (RF) circuits. Collaborators include local experimentalists, academics from Europe, and industrial partners in North America, including IBM and Qualcomm.
- “Fin” field-effect transistors (FinFETs) for analog and radio-frequency applications
- Ferroelectrics and negative-capacitance field-effect transistors (NCFETs)
- Quantum transport in two-dimensional channel materials, such as MoS2 and SnS2
- N-path filter design